کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1298443 | 1498410 | 2006 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Co-doping effect of SnO2 and ZnO in In2O3 ceramics: Change in solubility limit and electrical properties
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
الکتروشیمی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Co-doping effect of SnO2 and ZnO in In2O3 ceramics: Change in solubility limit and electrical properties Co-doping effect of SnO2 and ZnO in In2O3 ceramics: Change in solubility limit and electrical properties](/preview/png/1298443.png)
چکیده انگلیسی
In this study, SnO2 and ZnO were co-doped in In2O3, and the phase development and electrical characteristics were examined. When Zn2+ was added to 20 at.% Sn4+ contained In2O3, in which a large amount of In4Sn3O12 second phase exists, the amount of the second phase decreased as the content of Zn2+ increased, which promoted grain growth and increased carrier mobility. In the case of a simultaneous substitution of Sn4+ and Zn2+ into In2O3 with almost the same atomic ratio, a large grain size without second phase was observed, while small grain sizes with many second phases were developed when Sn4+ and Zn2+ were added with different atomic ratios. The electrical characteristics analyzed by Hall effect measurement showed that the electron mobility and conductivity showed a close relationship with the microstructure, while the carrier concentration was almost constant regardless of the Zn2+ content.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid State Ionics - Volume 177, Issues 5â6, February 2006, Pages 601-605
Journal: Solid State Ionics - Volume 177, Issues 5â6, February 2006, Pages 601-605
نویسندگان
Kyung-Han Seo, Dong-Hyuk Park, Joon-Hyung Lee, Jeong-Joo Kim,