کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1298800 | 1498377 | 2008 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Introduction of In or Ga as second dopant to BaZr0.9Y0.1O3 − δ to achieve better sinterability
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موضوعات مرتبط
مهندسی و علوم پایه
شیمی
الکتروشیمی
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چکیده انگلیسی
BaZr1 − xYxO3 − δ is a proton-conducting oxide that has both high ionic conductivity and good chemical stability, but disadvantageously has low sinterability. In this work, two co-dopant systems, BaZr0.9(Y1 − xMx)0.1O3 − δ (M = Ga, In), were studied with the aim of improving sinterability. In both systems, sinterability was markedly improved. Although the addition of Ga markedly decreased the conductivity of BaZr1 − xYxO3 − δ, the addition of In did not decrease the conductivity significantly. It was shown that BaZr0.9Y0.05In0.05O3 − δ is a practically useful material with a good combination of conductivity and sinterability.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid State Ionics - Volume 179, Issues 9–10, 15 May 2008, Pages 324–329
Journal: Solid State Ionics - Volume 179, Issues 9–10, 15 May 2008, Pages 324–329
نویسندگان
Naoki Ito, Hiroshige Matsumoto, Yuya Kawasaki, Sachio Okada, Tatsumi Ishihara,