Synthesis and structure of a hafnium silylamide complex and the chemical vapor deposition of HfxSi1−xO2 films

The complex Hf[N(SiMe2H)2]4 was synthesized, structurally characterized, and used as a precursor with oxygen to prepare hafnium silicate thin films at substrate temperatures ⩾500 °C in a low-pressure CVD process. The as-deposited films were amorphous, and they remained amorphous upon annealing up to 1100 °C.

Tetrakis(bis(dimethylsilyl)amido)hafnium and oxygen produce amorphous hafnium silicate films in a low-pressure CVD process.Figure optionsDownload as PowerPoint slide