Optimized structures and ring strain energies of isoelectronic homo- and heterogermiranes c-AX2GeH2GeH2q (A/q = Ga/−1, Ge/0, As/+1): Variable trends across triads

Ring strain energies (RSEs) estimated for isoelectronic three-membered rings c-AX2GeR2GeR2q show varying trends dependent on the nature of the X substituents. Both size and electron-withdrawing/donating characteristics play roles.