High current field emission from individual non-linear resistor ballasted carbon nanotube cluster array

Field emission (FE) electron sources based on carbon nanotubes (CNTs) have the potential to serve as cold cathodes for various vacuum microelectronic and nanoelectronic devices. Emission currents are extremely sensitive to variation in emitter geometry and local surface states, both of which are difficult to synthesize uniformly when fabricating a CNT field emission array (FEA). Such non-uniformities cause unstable emission, limiting the current output. Here, we propose a method for simulating and fabricating a high performance CNT-FEA with emission units that are individually connected to a single crystalline silicon pillar (SP), which acts as an non-linear ballast resistor. Results showed that the driving field for this CNT-FEA was greatly reduced relative to CNT-FEAs on a flat silicon substrate. This improvement was due to the high aspect ratio of the CNT clusters combined with SPs. The FE behavior demonstrated that the emission current was limited by the non-linear resistors (NLRs). Emitted currents density over 1.65 A/cm2 at a low extraction field of 5.8 V/μm were produced by a 1 mm2 emmiting area. The proposed technology may be used to fabricate cathodes capable of reliable, uniform, and high current emission.