کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1414460 1508891 2013 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Growth direction manipulation of few-layer graphene in the vertical plane with parallel arrangement
موضوعات مرتبط
مهندسی و علوم پایه مهندسی انرژی انرژی (عمومی)
پیش نمایش صفحه اول مقاله
Growth direction manipulation of few-layer graphene in the vertical plane with parallel arrangement
چکیده انگلیسی

Vertical few-layer graphene (FLG) sheets have potential applications as field emitters and super capacitors. However, it remains a challenge to controllably grow FLG with vertical and parallel orientations. We intentionally designed the substrate surface structure to manipulate the distribution of the plasma sheath and induce the direction of the built-in electric field to guide the growth direction of the FLG in two dimensions. The effects of the plasma sheath and the built-in field on the FLG growth are discussed. The electrical and field emission characteristics of single sheet FLG with parallel and random types were measured, and they demonstrate similar and good characteristics. This method provides a way to controllably grow parallel and vertical FLG arrays.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Carbon - Volume 56, May 2013, Pages 103–108
نویسندگان
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