A study of inner process double-resonance Raman scattering in bilayer graphene

The dispersion of phonons and the electronic structure of graphene systems can be obtained experimentally from the double-resonance (DR) Raman features by varying the excitation laser energy. In a previous resonance Raman investigation of graphene, the electronic structure was analyzed in the framework of the Slonczewski–Weiss–McClure (SWM) model, considering the outer DR process. We analyze the data considering the inner DR process, and obtain SWM parameters that are in better agreement with those obtained from other experimental techniques.