The formation of a dual-layer carbon film on silicon carbide using a combination of carbide-derived carbon process and chemical vapor deposition in a CCl4 – containing atmosphere

The synthesis of a dual-layer carbon film on SiC is reported using a combination of carbide-derived carbon (CDC) process and chemical vapor deposition (CVD) in a CCl4 – containing atmosphere. The film is composed of a CDC sub-layer formed by chlorination of the SiC and a CVD top-layer by pyrolyzing CCl4. Scanning electron microscopy, Raman spectroscopy, X-ray diffraction, and thermogravimetric analysis are employed to analyze the film. The formation mechanism of the dual-layer film is proposed as two simultaneous and competitive processes, namely, the chlorination of SiC and the growth of CVD layer.

A dual-layer carbon film is prepared using a combination of carbide-derived carbon (CDC) process and chemical vapor deposition (CVD) in a CCl4–containing atmosphere. The CDC sub-layer is formed by chlorination of SiC, while the CVD layer is formed by pyrolyzing the CCl4.Figure optionsDownload as PowerPoint slideResearch highlights
► A dual-layer carbon film was synthesized on SiC in a CCl4-containing atmosphere.
► The carbon film was composed of a sub-layer of CDC and a top-layer of pyrolytic carbon.
► The chlorination and chemical vapor deposition took place in the process.
► The film formation depends on temperature.