Tuning Schottky diodes at the many-layer-graphene/semiconductor interface by doping

We report on the use of bromine intercalation of graphite to perform in situ tuning of the Schottky barrier height (SBH) formed at many-layer-graphene (MLG) semiconductor interfaces. The intercalation of Br into MLG simultaneously increases interlayer separation between the graphene planes, while at the same time giving rise to an increase (decrease) in the free hole carrier density (Fermi energy) because of the transfer of electrons from carbon to bromine. The associated increase in the graphite work function results in an increase of the SBH, as manifested by lower forward/reverse current densities and higher depletion capacitances. These results are quantitatively understood within the context of the Schottky–Mott model and thermionic emission theory. The presented results have important implications for sensing and high power applications as well as the integration of carbon into semiconductors and carbon/graphene electronics.