Cleaning organized single-walled carbon nanotube interconnect structures for reduced interfacial contact resistance

A method is presented for significantly reducing the interfacial contact resistance of single-walled carbon nanotube (SWCNT) interconnects test-structures. Conventional lithographic cleaning steps are insufficient for complete removal of lithographic residues in SWCNT networks, leading to large interfacial contact resistance. Using improved purification procedures and controlled developing time, the interfacial contact resistance between SWCNTs and contact electrodes of Ti/Au were found to reach values below 2% of the overall resistance in two-probe test-structures of SWCNTs, demonstrating the importance of cleaning lithographic residues from the surface of SWCNTs before the fabrication of metal electrodes. These low-resistance contacts are quite stable over a large temperature range, and represent a step towards the implementation of SWCNTs as future interconnects.