Electrochemical doping of single-walled carbon nanotubes in double layer capacitors studied by in situ Raman spectroscopy

The electrochemical doping of single-walled carbon nanotubes (SWCNTs) in 1 M Et4NBF4 in acetonitrile was investigated by in situ Raman spectroscopy. The capacitance was determined to be 82 F/g for the positive and 71 F/g for the negative SWCNT electrode, respectively, which approaches the typical values for microporous activated carbons used in supercapacitors. The changes in the Raman intensities and shifts of the D and G+ bands as well as of the radial breathing modes (RBMs) during electron and hole injection were studied as a function of the electrode potential. For the D and G+ bands, hole doping leads to strong upshifts which can be attributed to a stiffening of C–C bonds and the corresponding phonon modes. Electron doping results in much less pronounced changes in the band positions. The intensity attenuation of the RBM bands was found to be markedly different for semi-conducting and metallic SWCNTs, whereby sufficiently high doping leads to a loss of Raman intensity due to bleaching of electronic transitions. The main RBM bands upshift upon both electron and hole doping, which is attributed to changes in the chemical environment of individual SWCNTs upon charging and discharging of the electrochemical double layer within SWCNT bundles.