کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
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1418592 | 986007 | 2008 | 9 صفحه PDF | دانلود رایگان |

Graphene and carbon nanotubes (CNT) can be produced by vacuum decomposition of SiC, but discrepancies and conflicting data in the literature limit the use of this method for CNT synthesis. A systematic study of the effects of SiC surface morphology and carbon transport through the gas phase leads to reproducible and controlled growth of arrays of small-diameter (1–4 walls) nanotubes, which show pronounced radial breathing modes in Raman spectra, on either carbon (0001¯) or silicon (0 0 0 1) face of 6H SiC wafers at 1400–1900 °C. These nanotube arrays have a very high density and are catalyst-free with no internal closures. They show a higher oxidation resistance compared to CNTs produced by catalytic chemical vapor deposition (CVD). Their integration with graphite/graphene or silica layers on SiC wafers is possible in a simple 2-step process and opens new horizons in nanoscale device fabrication.
Journal: Carbon - Volume 46, Issue 6, May 2008, Pages 841–849