Simulation of carbon nanotube based p–n junction diodes

Taking advantage of the unique characteristics of an ambipolar carbon nanotube field effect transistor (CNTFET), a ‘p–n junction’ is simulated along the single-walled carbon nanotube channel using two separate gates close to the source and drain of the CNTFET, respectively. The current–voltage characteristics of the double-gated CNTFET are calculated using a semiclassical method based on the Schottky barrier field effect transistor mechanism. The calculation results show a good rectification performance of the p–n junction.