کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1430428 987203 2009 7 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Visible luminescence in photo-electrochemically etched p-type porous silicon: Effect of illumination wavelength
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد بیومتریال
پیش نمایش صفحه اول مقاله
Visible luminescence in photo-electrochemically etched p-type porous silicon: Effect of illumination wavelength
چکیده انگلیسی

The effect of low power density of ~ 5 μW/cm2 monochromatic light of different wavelengths on the visible photoluminescence (PL) properties of photo-electrochemically formed p-type porous silicon (PS) has been investigated. Two-peak PL “red” and “green” is resolved in PS samples etched under blue-green wavelength illumination; 480, 533 and 580 nm. It is found that the weight of “green” PL has maxima for the sample illuminated with 533 nm wavelength. Whereas, PL spectra of PS prepared under the influence of red illumination or in dark does not exhibit “green” PL band, but shows considerable enhancement in the “red” PL peak intensity. Fourier transform infrared (FTIR) spectroscopic analysis reveals the relationship between the structures of chemical bonding in PS and the observed PL behavior. In particular, the PL efficiency is highly affected by the alteration of the relative content of hydride, oxide and hydroxyl species. Moreover, relative content of hydroxyl group with respect to oxide bonding is seen to have strong relationship to the blue PL. Although, the estimated energy gap value of PS samples shows a considerable enlargement with respect to that of bulk c-Si, the FTIR, low temperature PL and Raman measurements and analysis have inconsistency with quantum confinement of PS.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science and Engineering: C - Volume 29, Issue 7, 31 August 2009, Pages 2092–2098
نویسندگان
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