CoSi2 nanostructures by writing FIB ion beam synthesis

A mass separated focused ion beam (FIB) is a very useful tool to fabricate nanostructures by writing implantation within an ion beam synthesis process. In these investigations the IMSA-OrsayPhysics FIB, equipped with a Co36Nd64 alloy liquid metal ion source, was applied. Si(100) and (111) wafers were implanted with 60 keV Co++ ions in the dose range of 2 · 1016 to 2 · 1017 cm− 2. Implantation parameters were investigated, like pixel dwell time, relaxation time (time between two cycles), dose rate as well as the pixel overlapping factor. The subsequent annealing was done in a two step process, namely 600 °C for 60 min and 1000 °C for 30 min in a N2 ambient. The results obtained by SEM investigations in terms of continuous nanowire structures following the <110> direction and interrupted CoSi2 pattern in the <100> direction show a clear dependence on the time scale as well as the scanning mode of the irradiation. Structure sizes as small as 10 nm are demonstrated. The formation of CoSi2 nanostructures is explained by precipitation, Ostwald ripening and coarsening leading to a shrinking of the initial implanted profile.