کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1430596 | 1509191 | 2006 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Influence of nanocrystalline structure of surface on boron gettering from silicon
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
بیومتریال
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Phenomenon of strong absorption of microwave radiation by porous layer after the sample was annealed in air at 400-500 °C was also detected at 37 GHz. This absorption is equivalent to high conductivity of layer (Ï = 10â 2-10â 3 Ω cm) and it is much higher (at least in 104 times) than of c-Si substrate. Removal of porous layer (thickness of â¼Â 20 μm) from 400-μm substrate leads to where Q-factor of cavity is restored completely. The high conductivity of the porous layer comes mainly from conduction along the nanocrystalline grains, while SiO2 layer essentially insulates their interface. One possible effect explanation is that high concentration of positive charge states formed in SiO2 layer can lead to the creation of high density of free electrons in the SiO2/Si interface with formation of conductive channels along each nanocrystallite. On the other hand, appreciable microwave absorption is not detected on 9.4 GHz (X-band); therefore, we cannot exclude the existence of quasi-resonant microwave absorption that is related with nanocrystallites sizes, i.e. quantum confinement and electrons tunneling between grains.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science and Engineering: C - Volume 26, Issues 5â7, July 2006, Pages 822-825
Journal: Materials Science and Engineering: C - Volume 26, Issues 5â7, July 2006, Pages 822-825
نویسندگان
Yu.V. Gorelkinskii, Kh.A. Abdullin, B.N. Mukashev, G.K. Kalykova, A.S. Serikkanov,