کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1431060 | 1509189 | 2008 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Spectroscopic ellipsometry analysis of GaAs1 â xNx layers grown by molecular beam epitaxy
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
بیومتریال
پیش نمایش صفحه اول مقاله

چکیده انگلیسی
In this work, we present the effect of nitrogen incorporation on the dielectric function of GaAsN samples, grown by molecular beam epitaxy (MBE) followed by a rapid thermal annealing (for 90 s at 680 °C). The GaAs1 â xNx samples with N content up to 1.5% (x = 0.0%, 0.1%, 0.5%, 1.5%), are investigated using room temperature spectroscopic ellipsometry (SE). The optical transitions in the spectral region around 3 eV are analyzed by fitting analytical critical point line shapes to the second derivative of the dielectric function. It was found that the features associated with E1 and E1 + Î1 transitions are blue-shifted and become less sharp with increasing nitrogen incorporation, in contrast to the case of E0 transition energy in GaAs1 â xNx. An increase of the split-off Î1 energy with nitrogen content was also obtained, in agreement to results found with MOVPE GaAs1 â xNx grown samples.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science and Engineering: C - Volume 28, Issues 5â6, 1 July 2008, Pages 640-644
Journal: Materials Science and Engineering: C - Volume 28, Issues 5â6, 1 July 2008, Pages 640-644
نویسندگان
N. Ben Sedrine, J. Rihani, J.L. Stehle, J.C. Harmand, R. Chtourou,