کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1431066 | 1509189 | 2008 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Influence of interface states and deep levels on output characteristics of InAlAs/InGaAs/InP HEMTs
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
بیومتریال
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
The aim of this work is to study the origin of parasitic effects observed on the output characteristics of InAlAs/InGaAs/InP HEMTs with various buffer layers. Ids − Vds measurements as a function of the temperature have first been performed. Several anomalies were observed such as kink and hysteresis effects. C-DLTS measurements have also been performed. From the obtained results, we have established a strong correlation between parasitic effects observed on the output characteristics and deep levels located near the buffer layer interface.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science and Engineering: C - Volume 28, Issues 5–6, 1 July 2008, Pages 676–679
Journal: Materials Science and Engineering: C - Volume 28, Issues 5–6, 1 July 2008, Pages 676–679
نویسندگان
S. Bouzgarrou, Na. Sghaier, M.M. Ben Salem, A. Souifi, A. Kalboussi,