کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1431110 1509189 2008 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Abnormal optical behaviour of InAsSb quantum dots grown on GaAs substrate by molecular beam epitaxy
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد بیومتریال
پیش نمایش صفحه اول مقاله
Abnormal optical behaviour of InAsSb quantum dots grown on GaAs substrate by molecular beam epitaxy
چکیده انگلیسی

InAs(Sb) quantum dots (QDs) samples were grown on GaAs (001) substrate by Molecular Beam Epitaxy (MBE). The structural characterization by Atomic Force Microscopy (AFM) of samples shows that InAsSb islands size increases strongly with antimony incorporation in InAs/GaAs QDs and decreases with reducing the growth temperature from 520 °C to 490 °C. Abnormal optical behaviour was observed in room temperature (RT) photoluminescence (PL) spectra of samples grown at high temperature (520 °C). Temperature dependent PL study was investigated and reveals an anomalous evolution of emission peak energy (EPE) of InAsSb islands, well-known as “S-inverted curve” and attributed to the release of confined carriers from the InAsSb QDs ground states to the InAsSb wetting layer (WL) states. With only decreasing the growth temperature, the S-inverted shape was suppressed indicating a fulfilled 3D-confinement of carriers in the InAsSb/GaAs QD sample.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science and Engineering: C - Volume 28, Issues 5–6, 1 July 2008, Pages 918–922
نویسندگان
, , , , , ,