Thickness dependence of structural and optical properties of novel 2-((1, 1-bis(diphenylphosphino)-2-phenylpropan-2-yl)-chromium tetracarbonyl-amino)-3-phenylpropanoic acid copper (II) (DPP-Cr-Palan-Cu) nanocrystalline thin film

• Prepared DPP-Cr-Palan-Cu thin films on quartz substrates by thermal evaporation technique.
• Structural and Thermal study analysis of the DPP-Cr-Palan-Cu complex
• The effects of film thickness on the structural and optical characteristics of the thin films were investigated.
• DPP-Cr-Palan-Cu thin films are suitable for use as transparent electronic devices by adjusting the film thickness.

A novel transition metal complex and its derivatives, 2-((1,1-bis(diphenyl phosphino)-2-phenylpropan-2-yl)-chromium tetracarbonyl-amino)-3-phenylpropanoic acid copper (II) (DPP-Cr-Palan-Cu) were synthesized. X-ray diffraction showed the existence of the nanostructure of the as-deposited DPP-Cr-Palan-Cu thin films. Also, The XRD for DPP-Cr-Palan complex in a powder form was of a polycrystalline nature and of a monoclinic crystal system with space group Trigonal/P3. The optical properties of DPP-Cr-Palan-Cu thin films are prepared by thermal evaporation technique at room temperature were investigated. Optical properties were studied for the DPP-Cr-Palan-Cu thin films with various thickness 100, 150, 200 and 250 nm at normal incidence of light in the wavelength range of 300–850 nm. The refractive index (n) and the absorption index (k) were computed using the obtained data of transmittance T(λ) and reflectance R(λ  ). The complex dielectric constant, optical conductivity, optical band gap Egopt, volume energy loss (VELF), and surface energy loss (SELF) functions were calculated and interpreted. The results of the optical absorption data showed that DPP-Cr-Palan-Cu thin films have mainly direct energy gap bands in the energy range from 1.924 to 1.662 eV for film thickness 100 nm to 250 nm, respectively. The obtained results indicate that the DPP-Cr-Palan-Cu organic semiconductor thin film is a good candidate in optoelectronic devices based on its band gap and dispersion parameters.