کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1441373 1509401 2013 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Insulator surface modification of field-effect transistor using isolated poly(3-hexylthiophene) nanofiber
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد بیومتریال
پیش نمایش صفحه اول مقاله
Insulator surface modification of field-effect transistor using isolated poly(3-hexylthiophene) nanofiber
چکیده انگلیسی


• Insulator surface modification of FET using P3HT nanofibers was investigated.
• The FET of nanofiber mat on fluoro-modified surface was in a normally-on state.
• The mobility was larger than that on other modified surface.
• The mobility of isolated nanofibers on fluoro-modified surface was much larger.

The surface modification of insulators and electrodes of field-effect transistor (FET) devices using a poly(3-hexylthiophene) (P3HT) nanofiber was investigated. The mobility of the P3HT nanofiber using an insulator surface modified by perfluorodecyltrimethoxysilane (FAS) was much larger than that modified by other reagents, i.e. octadecyltrimethylsilane (OTS) and 3-aminopropyltrimethoxysilane (APS). In addition, the threshold increased with the use of FAS and was in a normally-on state. In particular, an FET of isolated nanofibers upon insulator surface modification by FAS showed a high mobility of 6.8 × 10−1 cm2 V−1 s−1.

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ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Synthetic Metals - Volume 175, 1 July 2013, Pages 200–204
نویسندگان
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