Dielectric properties and diffuse phase transition behavior of CuO-doped lead-free Ba(ZrxTi1−x)O3 ceramics

CuO-doped lead-free Ba(Zr0.2Ti0.8)O3 (BZT20) ceramics were prepared through a solid state processing technique, and the effects of CuO on microstructure, dielectric properties and diffuse phase transition behavior were investigated. The average grain sizes were increased by CuO doping. The temperature and frequency dependences of the dielectric constant revealed that CuO-doped BZT20 ceramics exhibited broad diffuse phase transition behavior. The dielectric constant increased with increasing CuO concentration. The value of Tm and degree of diffusion (γ) changed regularly in the studied compositional ranges. The BZT20 samples with 1.0 mol% CuO doping, sintered at 1310 °C, showed excellent dielectric property and lower diffusivity with εm=21,371 and γ=1.87. These results can be explained by the disordered distribution of Cu ions in the B sites and the weakened bonding force with oxygen ions in Cu substituted BZT20 structure.