کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1459346 989592 2015 11 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Enhanced hydrogen sensing performance of tungsten activated ZnO nanorod arrays prepared on conductive ITO substrate
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد سرامیک و کامپوزیت
پیش نمایش صفحه اول مقاله
Enhanced hydrogen sensing performance of tungsten activated ZnO nanorod arrays prepared on conductive ITO substrate
چکیده انگلیسی

We report for the first time, the H2 sensing properties of tungsten activated ZnO (W:ZnO) films prepared on electrically conductive Indium Tin Oxide (ITO) coated glass substrate by spray pyrolysis technique. Microstructure, morphology and optical properties of W:ZnO films prepared with different W dopant concentrations were investigated. All the deposited films show a hexagonal wurtzite crystal structure with preferred orientation along the c-axis perpendicular to the ITO substrate. The optical absorption results revealed increase in band gap and improvement in transmission upto 3% W incorporation in ZnO. The improved crystallinity of the ZnO film revealed from increase in intensity of photo emission, established the possibility of development of a sensor device with W dopant at 3% level. The energy dispersive X-ray elemental analysis of the samples confirmed the incorporation of W ions into ZnO lattice. SEM results show the influence of W catalyst on the uniform and well-aligned growth of ZnO nanorods with unique shape on ITO substrate, which provided higher capture efficiency favorable for Hydrogen (H2) sensing. Gas sensing properties of W:ZnO films were studied at room temperature for different H2 concentrations (from 100 to 400 ppm). It was demonstrated that W doping play an important role in defining the enhancement of sensor response towards H2. Our results show fast response and recovery time for 3% W:ZnO film, suitable for high performance H2 gas detection.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Ceramics International - Volume 41, Issue 10, Part B, December 2015, Pages 14315–14325
نویسندگان
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