کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1459699 | 989596 | 2015 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Comparative studies on the physical and electronic properties of reactively sputtered ZnO and ZnON semiconductors
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سرامیک و کامپوزیت
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Thin film transistors were fabricated using ZnO and ZnON semiconductors grown by DC reactive sputtering. After low vacuum annealing at 250 °C, ZnON devices exhibit superior electrical performance (µsat=56.3 cm2/Vs, Vth=−1.59 V, and SS=0.51 V/dec) in comparison with ZnO devices (µsat=0.99 cm2/Vs, Vth=3.28 V, and SS=1.22 V/dec). The physical and electronic structures in both materials were analyzed by X-ray diffraction and X-ray absorption spectroscopy, respectively. The chemical bonding states were also examined by X-ray photoelectron spectroscopy. Consequently, nitrogen incorporation in DC reactive sputtering is found to suppress crystallization and enhance electron transport by the formation of Zn–N bonds.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Ceramics International - Volume 41, Issue 10, Part A, December 2015, Pages 13281–13284
Journal: Ceramics International - Volume 41, Issue 10, Part A, December 2015, Pages 13281–13284
نویسندگان
Kyung-Chul Ok, Hyun-Jun Jeong, Hyun-Mo Lee, Jozeph Park, Jin-Seong Park,