کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1463691 989650 2009 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Effects of rf-power and working pressure on formation of rutile phase in rf-sputtered TiO2 thin film
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد سرامیک و کامپوزیت
پیش نمایش صفحه اول مقاله
Effects of rf-power and working pressure on formation of rutile phase in rf-sputtered TiO2 thin film
چکیده انگلیسی

Thin TiO2 films have been deposited on glass substrates by a radio-frequency (rf) magnetron sputtering technique. The films were coated under argon atmosphere at three different rf-powers: 80, 100 and 120 W, and three working pressures: 1.0 × 10−2, 2.5 × 10−3 and 1.0 × 10−3 mbar. Film structures were analyzed with XRD. At 100 and 120 W, films coated under low working pressure have developed the rutile phase with the preferred (1 1 0) orientation. However, at 80 W, the films have been observed only in an amorphous phase for all working pressures. This effect could be understood as sputtered TiO2 molecules were more energetic at high rf-powers and encountered fewer collisions at low pressure before deposited onto the substrates. The films have also been annealed at 773 or 873 K. The post-deposition annealing has significantly improved crystallization of the TiO2 films. In this contribution, results on optical and wetting properties of these films are also reported.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Ceramics International - Volume 35, Issue 3, April 2009, Pages 1281–1284
نویسندگان
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