کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1463880 | 989652 | 2008 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Microstructure and ferroelectric properties of sol–gel graded PZT (40/52/60) and (60/52/40) thin films
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سرامیک و کامپوزیت
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Microstructure and ferroelectric properties of sol–gel graded PZT (40/52/60) and (60/52/40) thin films Microstructure and ferroelectric properties of sol–gel graded PZT (40/52/60) and (60/52/40) thin films](/preview/png/1463880.png)
چکیده انگلیسی
Graded Pb(Zrx,Ti1−x)O3 films with Zr compositions varied across the thickness direction were deposited on Pt/Ti/SiO2/Si substrate using a conventional spin-coating method. The up- and down-graded PZT films exhibited the perovskite polycrystalline structure. Microstructure investigations of the films showed a dense texture and successive layers of different compositions. The relative permittivities of the up- and down-graded PZT films measured at 1 kHz and room temperature were 1846 and 1019, respectively. Good dielectric and ferroelectric properties as well as the low-temperature processing suggested that the compositionally graded PZT films were promising for memory device applications.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Ceramics International - Volume 34, Issue 4, May 2008, Pages 1027–1030
Journal: Ceramics International - Volume 34, Issue 4, May 2008, Pages 1027–1030
نویسندگان
P. Khaenamkaew, I.D. Bdikin, A.L. Kholkin, S. Muensit,