Mercaptosuccinic acid modified silicon particle inks: Production, structural, and electrical characterizations

• We show a simple method for producing highly hydrophilic Si particles.
• Si particle network (i.e. porous-like) films were obtained from the particle inks.
• Surface oxide on the films was hardly grown even after removal of the modifiers.
• The Si films exhibited ohmic I–V characteristics with resistivities of ∼102 Ω cm.
• The I–V curve shapes and slopes changed by changing atmosphere gases.

Water soluble Si particles were produced by modifying the surface with mercaptosuccinic acid (MSA). Using the MSA modified Si particle ink, porous-like Si films with resistivities of 102 Ω cm were formed by annealing above 260 °C. Current–voltage (I–V) characteristics of the annealed films were ohmic in N2. When the films were exposed to air, the current decreased and the I–V curve became nonlinear. This nonlinear characteristic could be explained by the Poole–Frenkel model, which indicated that adsorbed gas molecules produced traps for free carriers. The I–V curve returned to the original shape by changing the atmosphere gas back to N2. The semiconductive porous-like Si films made from the Si particle inks are expected to be applied to a variety of electronic devices such as gas sensors and high capacity anodes for lithium-ion batteries.

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