کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
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1474036 | 991073 | 2012 | 5 صفحه PDF | دانلود رایگان |
The present paper describes the effect of various Si–N substitution degree on the crystal structure and optical properties of yellow YAG:Ce phosphor commonly used with combination of InGaN in white LEDs. It has been found that the course of silicon/nitrogen YAG:Ce garnet doping as well as formation of the liquid phase and its chemical composition controlled formation of the side phase besides YAG:Ce. Substitution of Al–O for Si–N chemical bonds according to the general formula Y2.94Ce0.06Al(5−x)SixO(12−x)Nx was confirmed by changes of the unit cell parameter and formation of the Si–N bonds as detected by FT-IR studies. Formation of the nitrogen ligand in cerium arrangement resulted in a red shift in emission spectrum of trivalent cerium if nominal x value was in the range of 0.2–0.3. Above x = 0.3 only decrease of emission intensity was observed because of the secondary phase precipitation but further solution of Si–N in YAG:Ce crystal lattice cannot be excluded.
Journal: Journal of the European Ceramic Society - Volume 32, Issue 7, June 2012, Pages 1383–1387