کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1487309 | 1510705 | 2015 | 5 صفحه PDF | دانلود رایگان |
• Growth of Fe doped Eu2O3 thin films by PLD.
• XRD and Raman’s spectroscopy used for structure confirmation.
• The electronic states of Eu and Fe are confirmed by XPS.
• Magnetic properties reveals room temperature magnetic ordering in deposited film.
Fe (4 at.%) doped europium (III) oxide thin film was deposited on silicon (1 0 0) substrate by pulsed laser deposition technique. Structural, spectral and magnetic properties were studied by X-ray diffraction (XRD), Raman spectroscopy, X-ray photoelectron spectroscopy (XPS) and magnetization measurements. XRD and Raman spectroscopy reveal that the grown film is single phased and belongs to the cubic structure of Eu2O3. XPS study of the Eu1.92Fe0.08O3 film shows that Fe exists in Fe3+ ionic state in the film. The film exhibits magnetic ordering at room temperature.
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Journal: Materials Research Bulletin - Volume 70, October 2015, Pages 392–396