Electrical characterization of Mn doped-(Ba0.3Sr0.7)Mnx(Ti0.9Zr0.1)1-xO3 ceramics

• Solid state processing of the (Ba0.3Sr0.7)Mnx(Ti0.9Zr0.1)1−xO3 ceramics.
• Mn incorporated on the Ti-site into the host lattice of (Ba0.3Sr0.7)Mnx(Ti0.9Zr0.1)1−xO3.
• NTCR behavior was observed in the sintered samples.

(Ba0.3Sr0.7)Mnx(Ti0.9Zr0.1)1-xO3 (x = 0.00, 0.013, 0.015 and 0.05) ceramics were prepared by solid state sintering route at the 1500 °C for 6 h in air. Effect of Mn substitution on the structure of Ba0.3Sr0.7(Ti0.9Zr0.1)1−xO3 perovskite was investigated systematically. Dielectric and impedance spectroscopic studies were conducted to understand the electronic microstructure of the Ba0.3Sr0.7(Ti0.9Zr0.1)1−xO3 ceramics. Sample with x = 0.05 showed the highest dielectric constant (ϵr = 1826) and low dielectric loss (tanδ = 0.001) at 10 kHz, around the room temperature, while the sample with x = 0.00 showed good microwave (MW) dielectric properties (Qfo = 838 and ϵr = 550). The impedance spectroscopic analysis confirmed the electrical homogeneity of the samples with x = 0.013, 0.015 and 0.05, where grain boundaries dominated the conduction mechanism. Similarly, the sample with x = 0.00 was found to possess both grain boundary and bulk resistive contributions.

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