Growth and luminescent properties of scintillators based on the single crystalline films of Lu3−xGdxAl5O12:Ce garnet

• Single crystalline films of Lu3−xGdxAl5O12 garnets at x = 0 ÷ 3.0 were grown by LPE method onto YAG substrates.
• Lattice constant of Lu3−GdxAl5O12:Ce film and the misfit m between films and YAG substrate changed linearly with increasing of Gd content.
• Effective Gd3+–Ce3+ energy transfer occurs in the Lu3−xGdxAl5O12:Ce films.
• Best scintillation light yield is observed in the Lu3Al5O12:Ce and Lu2.4Gd0.6Al5O12:Ce films.
• Increase of the Gd content in x = 1.5–2.5 range results in decreasing the scintillation LY of Lu3−xGdxAl5O12:Ce films.

The work is related to the growth of scintillators based on the single crystalline films (SCF) of Ce3+ doped Lu3−GdxAl5O12 mixed rare-earth garnets by Liquid Phase Epitaxy (LPE) method. We have shown, that full set of Lu3−GdxAl5O12 SCFs with x values ranging from 0 to 3.0 can be successfully crystallized by the LPE method onto Y3Al5O12 (YAG) substrates from the melt-solutions based on PbO-B2O3 flux. The absorption, X-ray excited luminescence, photoluminescence, thermoluminescence and light yield measurements, the latter under excitation by α-particles of 239Pu and 241Am radioisotopes, were applied for their characterization.

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