Hybrid device based on GaN nanoneedles and MEH-PPV/PEDOT:PSS polymer

• A hybrid device was demonstrated by using MEH-PPV, PEDOT:PSS, and GaN nanoneedles.
• I–V curve of the hybrid device showed its rectification behaviour, similar to a diode.
• EL peak originated by the different potential barriers at MEH-PPV and GaN interface.

A hybrid device that combines the properties of organic and inorganic semiconductors was fabricated and studied. It incorporated poly[2-methoxy-5-(2-ethylhexyloxy)- 1,4-phenylenevinylene] (MEH-PPV) and poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) as organic polymers and GaN nanoneedles as an inorganic semiconductor. Layers of the two polymers were spin coated on to the GaN nanoneedles. The one peak in the electroluminescence spectrum originated from the MEH-PPV layer owing to the different potential barriers of electrons and holes at its interface with the GaN nanoneedles. However, the photoluminescence spectrum showed peaks due to both GaN nanoneedles and MEH-PPV. Such hybrid structures, suitably developed, might be able to improve the efficiency of optoelectronic devices.

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