Density of electronic states and dispersion of optical functions of defect chalcopyrite CdGa2X4 (X = S, Se): DFT study

• FPLAPW method is used for calculating the electronic and optical properties of CdGa2X4.
• Electronic and optical properties were calculated using LDA, GGA, EVGGA and mBJ.
• Band gap conformed that CdGa2X4 are semiconductors fit for UV and visible light.
• The ECD shows that change in the bond length and bond nature affect the band gap.
• The dielectric tensor components and its derivatives show considerable anisotropy.

A density functional theory (DFT) based on full potential linear augmented plane wave (FPLAPW) was used for calculating the electronic structure, charge density and optical properties of CdGa2X4 (X = S, Se) compounds. Local density approximation (LDA), generalized gradient approximation (GGA), Engle Vasko generalized gradient approximation (EVGGA) and recently modified Becke–Johnson (mBJ) were applied to calculate the band structure, total and partial density of states. The investigation of band structures and density of states of CdGa2X4 (X = S, Se) elucidate that mBJ potential show close agreement to the experimental results. The mBJ potential was selected for further explanation of optical properties of CdGa2X4 (X = S, Se). The study of electronic charge density contours shows that change in the bond lengths and bond nature affect the band gap of the compounds. The two non-zero dielectric tensor components and its derivatives show considerable anisotropy between the perpendicular and parallel components. The present work provide accurate information about the combination (hybridization) of orbital, formation of bands and dispersion of non-zero tensor components of CdGa2X4 (X = S, Se).

Figure optionsDownload as PowerPoint slide