Size and defect related broadening of photoluminescence spectra in ZnO:Si nanocomposite films

Nanocomposite films of zinc oxide and silicon were grown by thermal evaporation technique using varying ratios of ZnO:Si in the starting material. Structural analyses reveal the role of ZnO and amorphous silicon interface in contributing to the relatively less common blue photoluminescence emissions (at ∼410 and 470 nm). These blue peaks are observed along with the emissions resulting from band edge transition (370 nm) and those related to defects (520 nm) of ZnO. Careful analysis shows that along with the grain size of ZnO, a suitable compositional ratio of ZnO to silicon is critical for the coexistence of all the four peaks. Proper selection of conditions can give comparable photoluminescence peak intensities leading to broad-band emission.

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► Nanocomposite films of ZnO and Si of different ratios were grown by thermal evaporation technique.
► PL emissions observed in the UV–vis regions.
► Varying ratio of Si:ZnO controlled the grain size.
► Grain size, its structure, boundaries and background species play role in PL peak broadening.
► Possibility of achieving white light production.