Photoluminescence properties of Si–N-doped BaAl12O19:Mn2+ phosphors for three-dimensional plasma display panels

Si–N-doped BaAl12O19:Mn2+ phosphors were synthesized by a conventional solid-state reaction. It reveals that an efficiently host absorption in the vacuum ultraviolet region, which could be ascribed to the restricted Reidinger defects and oxygen vacancies by the Si–N doping. A fortified energy transfer from host to the activators was observed because of the newly formed defect energy levels which generated from the un-equivalence substitution of Si–N for Al–O. The shorter decay time of 4.05 ms was obtained which due to the increased defect concentration. This result indicates that Si–N doping BaAl12O19:Mn2+ phosphors would meet the requirements of 3D PDPs.

Figure optionsDownload as PowerPoint slideHighlights
► The brightness of Si–N-doped BHA phosphor is 119.9% of the un-doped BHA.
► The decay time of Si–N-doped BHA phosphor is shorter than the un-doped sample.
► The Si–N doping BHA is expected to be potentially applicable to 3D PDPs.