Structure and luminescence properties of thermally nitrided Ga2O3 nanowires

The structure and luminescence properties of thermally nitrided Ga2O3 nanowires were examined. Transmission electron microscopy and X-ray diffraction confirmed the formation of a uniform GaN shell layer on the surface of the nanowires by thermal nitridation. The core and shell of the nitrided nanowires were monoclinic-structured single crystal Ga2O3 and wurtzite-type hexagonal close-packed-structured single crystal GaN, respectively. The as-synthesized Ga2O3 nanowires exhibited a broad emission band at approximately 570 nm in the yellow region. In contrast, the nitrided Ga2O3 nanowires exhibited a much stronger emission band at approximately 455 nm in the blue region, which must originate from the newly formed GaN shell layer.

The as-synthesized Ga2O3 nanowires exhibited a broad emission band at approximately 570 nm in the green region. In contrast, the thermally nitrided Ga2O3 nanowires exhibited a much stronger emission band at approximately 455 nm in the blue region.Figure optionsDownload as PowerPoint slideHighlights
► The structure and luminescence properties of thermally nitrided Ga2O3 nanowires were examined.
► A uniform GaN shell layer was formed on the surface of the nanowires by thermal nitridation.
► The as-synthesized Ga2O3 nanowires exhibited a broad yellow emission.
► The nitrided Ga2O3 nanowires exhibited a much stronger blue emission band due to the GaN shell layer.