کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1490092 992318 2012 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Structure and scintillation yield of Ce-doped Al–Ga substituted yttrium garnet
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد سرامیک و کامپوزیت
پیش نمایش صفحه اول مقاله
Structure and scintillation yield of Ce-doped Al–Ga substituted yttrium garnet
چکیده انگلیسی

Structure and scintillation yield of Y3(Al1−xGax)5O12:Ce solid solution crystals are studied. Crystals are grown from melt by the Czochralski method. Distribution of host cations in crystal lattice is determined. Quantity of antisite defects in crystals is evaluated using XRD and atomic emission spectroscopy data. Trend of light output at Al/Ga substitution in Y3(Al1−xGax)5O12:Ce is determined for the first time. Light output in mixed crystals reaches 130% comparative to Ce-doped yttrium–aluminum garnet. Luminescence properties at Al/Ga substitution are evaluated.

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► Range of Y3(Al1−xGax)5O12:Ce solid solution crystals are grown from melt by the Czochralski method.
► Light yield of mixed crystals reaches 130% of the YAG:Ce value at x ∼ 0.4.
► ∼1% of antisite defects is formed in YGG:Ce, but no evidence of this is obtained for the rest of crystals.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Research Bulletin - Volume 47, Issue 11, November 2012, Pages 3249–3252
نویسندگان
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