کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1490426 992323 2012 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Enhancement of photoluminescence in ZnS/ZnO quantum dots interfacial heterostructures
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد سرامیک و کامپوزیت
پیش نمایش صفحه اول مقاله
Enhancement of photoluminescence in ZnS/ZnO quantum dots interfacial heterostructures
چکیده انگلیسی

ZnS/ZnO quantum dots (QDs) were synthesized by controlled oxidation of ZnS nanoparticles. HRTEM image showed small nanocrystals of size 4 nm and the magnified image of single quantum dot shows interfacial heterostructure formation. The optical absorption spectrum shows a blue shift of 0.19 and 0.23 eV for ZnO and ZnS QDs, respectively. This is due to the confinement of charge carries within the nanostructures. Enormous enhancement in UV emission (10 times) is reported which is attributed to interfacial heterostructure formation. Raman spectrum shows phonons of wurtzite ZnS and ZnO. Phonon confinement effect is seen in the Raman spectrum wherein LO phonon peaks of ZnS and ZnO are shifted towards lower wavenumber side and are broadened.

Figure optionsDownload as PowerPoint slideHighlights
► ZnS/ZnO quantum dots (QDs) were synthesized by controlled oxidation of ZnS nanoparticles.
► Interfacial heterostructure formation of ZnS/ZnO QDs is seen in HRTEM.
► Enormous enhancement of UV emission (∼10 times) in ZnS/ZnO QDs heterostructure is observed.
► Phonon confinement effect is seen in the Raman spectrum.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Research Bulletin - Volume 47, Issue 9, September 2012, Pages 2668–2672
نویسندگان
, , , ,