کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1490940 992337 2009 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
InAs0.45P0.55/InP strained multiple quantum wells intermixed by inductively coupled plasma etching
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد سرامیک و کامپوزیت
پیش نمایش صفحه اول مقاله
InAs0.45P0.55/InP strained multiple quantum wells intermixed by inductively coupled plasma etching
چکیده انگلیسی
The intermixing effect on InAs0.45P0.55/InP strained multiple quantum wells (SMQWs) by inductively coupled plasma (ICP) etching and rapid thermal annealing (RTA) is investigated. Experiments show that the process of ICP etching followed RTA induces the blue shift of low temperature photoluminescence (PL) peaks of QWs. With increasing etching depth, the PL intensities are firstly enhanced and then diminished. This phenomenon is attributed to the variation of surface roughness and microstructure transformation inside the QW structure during ICP processing.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Research Bulletin - Volume 44, Issue 12, December 2009, Pages 2217-2221
نویسندگان
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