کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1491489 | 992352 | 2008 | 5 صفحه PDF | دانلود رایگان |
![عکس صفحه اول مقاله: A novel red phosphor for near UV InGaN light-emitting diode and its luminescent properties A novel red phosphor for near UV InGaN light-emitting diode and its luminescent properties](/preview/png/1491489.png)
A series of new red phosphors, NaEu(MoO4)2−2x(SO4)2x, were prepared by the conventional solid state reaction. Their excitation spectra, emission spectra and decay curves were measured at room temperature. When the SO42− content is in excess of 20%, other phases appear. With the introduction of SO42−, the Mo–O charge transfer band of NaEu(MoO4)2−2x(SO4)2x shows red shift, and the excitation intensities of the 4f – 4f transitions of Eu3+ are strengthened, compared with that of NaEu(MoO4)2. The single red light-emitting diodes-based these phosphors were fabricated. The light-emitting diode fabricated with the phosphor NaEu(MoO4)1.80(SO4)0.20 exhibited higher red emission relative to that with NaEu(MoO4)2. Bright red light can be observed by naked eyes from the light-emitting diode-based NaEu(MoO4)1.80(SO4)0.20.
Journal: Materials Research Bulletin - Volume 43, Issue 4, 1 April 2008, Pages 907–911