کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1496817 | 992976 | 2007 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Effects of RF power variation on properties of N-doped p-type ZnO thin films grown by plasma-assisted MOCVD
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سرامیک و کامپوزیت
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Effects of RF power variation on properties of N-doped p-type ZnO thin films grown by plasma-assisted MOCVD Effects of RF power variation on properties of N-doped p-type ZnO thin films grown by plasma-assisted MOCVD](/preview/png/1496817.png)
چکیده انگلیسی
High quality N-doped ZnO films were grown at different RF powers on glass substrates by plasma-assisted metalorganic chemical vapor deposition. Scanning electron microscopy, X-ray diffraction and Hall analyses were carried out to investigate the effects of RF power variation on surface morphology, crystallinity and electrical properties of the ZnO films. Increasing the RF power resulted in compacter surface morphology and change of the crystallinity as well as incorporation of more N atoms. Films grown at 150Â W exhibited the best p-type electrical properties. Moreover, room temperature photoluminescence spectra showed strong emission related to N acceptor.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Optical Materials - Volume 29, Issue 12, August 2007, Pages 1612-1615
Journal: Optical Materials - Volume 29, Issue 12, August 2007, Pages 1612-1615
نویسندگان
Yangfan Lu, Zhizhen Ye, Yujia Zeng, Weizhong Xu, Liping Zhu, Binghui Zhao,