کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1496843 992976 2007 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Temperature dependence of the band gap, refractive index and single-oscillator parameters of amorphous indium selenide thin films
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد سرامیک و کامپوزیت
پیش نمایش صفحه اول مقاله
Temperature dependence of the band gap, refractive index and single-oscillator parameters of amorphous indium selenide thin films
چکیده انگلیسی

InSe thin films are obtained by evaporating InSe crystal onto ultrasonically cleaned glass substrates under pressure of ∼10−5 Torr. The structural and compositional analysis revealed that these films are of amorphous nature and are atomically composed of ∼51% In and ∼49% Se. The reflectance and transmittance of the films are measured at various temperatures (300–450 K) in the incident photon energy range of 1.1–2.1 eV. The direct allowed transitions band gap – calculated at various temperatures – show a linear dependence on temperature. The absolute zero value band gap and the rate of change of the band gap with temperature are found to be (1.62 ± 0.01) eV and −(4.27 ± 0.02) × 10−4 eV/K, respectively. The room temperature refractive index is estimated from the transmittance spectrum. The later analysis allowed the identification of the static refractive index, static dielectric constant, oscillator strength and oscillator energy.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Optical Materials - Volume 29, Issue 12, August 2007, Pages 1751–1755
نویسندگان
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