کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1496843 | 992976 | 2007 | 5 صفحه PDF | دانلود رایگان |

InSe thin films are obtained by evaporating InSe crystal onto ultrasonically cleaned glass substrates under pressure of ∼10−5 Torr. The structural and compositional analysis revealed that these films are of amorphous nature and are atomically composed of ∼51% In and ∼49% Se. The reflectance and transmittance of the films are measured at various temperatures (300–450 K) in the incident photon energy range of 1.1–2.1 eV. The direct allowed transitions band gap – calculated at various temperatures – show a linear dependence on temperature. The absolute zero value band gap and the rate of change of the band gap with temperature are found to be (1.62 ± 0.01) eV and −(4.27 ± 0.02) × 10−4 eV/K, respectively. The room temperature refractive index is estimated from the transmittance spectrum. The later analysis allowed the identification of the static refractive index, static dielectric constant, oscillator strength and oscillator energy.
Journal: Optical Materials - Volume 29, Issue 12, August 2007, Pages 1751–1755