کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1497535 | 1510800 | 2006 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
High-quality multiple quantum wells selectively grown with tapered masks by ultra-low-pressure MOCVD
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سرامیک و کامپوزیت
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: High-quality multiple quantum wells selectively grown with tapered masks by ultra-low-pressure MOCVD High-quality multiple quantum wells selectively grown with tapered masks by ultra-low-pressure MOCVD](/preview/png/1497535.png)
چکیده انگلیسی
An InGaAsP/InGaAsP multiple quantum wells (MQWs) selectively grown by ultra-low-pressure (22 mbar) metal-organic chemical vapor deposition was investigated in this article. A 46 nm photoluminescence peak wavelength shift was obtained with a small mask width variation (15-30 μm). High-quality crystal layers with a photoluminescence (PL) full-width-at-half-maximum (FWHM) of less than 30 meV were achieved. Using novel tapered masks, the transition-effect of the tapered region was also studied. The energy detuning of the tapered region was observed to be saturated with the larger ratio of the mask width divided to the tapered region length.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Optical Materials - Volume 28, Issues 8â9, June 2006, Pages 1037-1040
Journal: Optical Materials - Volume 28, Issues 8â9, June 2006, Pages 1037-1040
نویسندگان
Q. Zhao, J.Q. Pan, J. Zhang, W. Wang,