Excitonic characteristics of wurtzite InGaN staggered quantum wells for light-emitting diode applications

Based on the effective-mass approximation, our calculation shows that for the wurtzite (WZ) In0.2Ga0.8N/InyGa1−yN symmetric staggered quantum well (QW) with In content y > 0.1, the stepped barrier effects are insensible to exciton states. However, for the WZ In0.2Ga0.8N/InyGa1−yN asymmetric staggered QWs, the maximum values of the exciton recombination rate appear when the In0.2Ga0.8N well layer is smaller than the InyGa1−yN layer thickness for In concentrations y < 0.1. The studies are useful in the design of high-performance blue and green light-emitting diodes.