کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1502323 | 1510934 | 2009 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Coordination imperfection enhanced electron–phonon interaction and band-gap expansion in Si and Ge nanocrystals
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سرامیک و کامپوزیت
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Coordination imperfection enhanced electron–phonon interaction and band-gap expansion in Si and Ge nanocrystals Coordination imperfection enhanced electron–phonon interaction and band-gap expansion in Si and Ge nanocrystals](/preview/png/1502323.png)
چکیده انگلیسی
Correlation between the size-enlarged Stokes shift and band-gap expansion of Si and Ge nanocrystals has been investigated in terms of the bond order–length–strength correlation. It is shown that the bond order deficiency of surface atoms dictates electron–phonon coupling and crystal binding, and enhances the size dependence of the observed blue shift in photoemission and photoabsorption of Si and Ge nanocrystals. Compared with Si, Ge nanocrystal exhibits stronger electron–phonon coupling due to larger phonon-induced deformation of the crystal lattice.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Scripta Materialia - Volume 60, Issue 12, June 2009, Pages 1105–1108
Journal: Scripta Materialia - Volume 60, Issue 12, June 2009, Pages 1105–1108
نویسندگان
Likun Pan, Zhuo Sun, Changqing Sun,