Structural and luminescence properties of pulsed laser deposited green-emitting Zn2SiO4:Mn phosphor thin films

The structural and photoluminescent (PL) properties of Zn2(1−x)MnxSiO4 (1 ⩽ x⩽ 5) thin film phosphors grown using a pulsed laser deposition technique have been investigated. The effect of systematic variation of oxygen partial pressures (O2 pp) (100, 300, 500 and 700 mTorr) during the growth of these thin films has been studied. Thin film grown on silicon substrate at 750 °C and in situ annealed in 300 mTorr of O2 pp exhibits superior PL property; ex situ annealing at higher temperatures improves the PL intensity.