Investigation of HfO2 doping on GeTe for phase change memory

► The phase change characteristics of HfO2 doping on GeTe in application for phase change memory were studied. ► The incorporation of HfO2 can improve the thermal stability of amorphous GeTe film. ► The GeTe-HfO2-based phase change memory exhibits lower power consumption than widely used Ge2Sb2Te5-based one.