Optical characterization of a strain-compensated GaAs0.64Sb0.36/GaAs0.79P0.21 quantum well structure grown by metal organic vapor phase epitaxy

► Optical study of strain-compensated GaAs0.64Sb0.36/GaAsxP1−x QW structures. ► PR and SPV spectra reveal type-I characteristic of GaAs0.64Sb0.36/GaAs0.79P0.21 QW. ► Strain compensation factor is used as a parameter for the theoretical calculation. ► Energy band of QW is changed by replacing GaAs barrier by GaAs0.79P0.21 layers.