کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
152352 | 456494 | 2009 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Photodegradation of carboxylic acids on Pr6O11 surface. Enhancement by semiconductors
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی شیمی
مهندسی شیمی (عمومی)
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Photodegradation of carboxylic acids on Pr6O11 surface. Enhancement by semiconductors Photodegradation of carboxylic acids on Pr6O11 surface. Enhancement by semiconductors](/preview/png/152352.png)
چکیده انگلیسی
Oxalic acid is photooxidized on Pr6O11 surface under UV-A light and the reaction follows first-order kinetics with a linear dependence on the photon flux. The photonic efficiency is higher with UV-C light than with UV-A light. While TiO2, ZnO, CuO, Bi2O3, and Nb2O5 individually photocatalyze the oxidation, each semiconductor, when present along with Pr6O11, shows enhanced oxidation indicating interparticle hole-jump from the band gap-excited semiconductor to oxalic acid-adsorbed on Pr6O11. The photonic efficiency of the oxidation on Pr6O11 surface is of the order: formic acid > oxalic acid > acetic acid; citric acid is unsusceptible to oxidation.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Chemical Engineering Journal - Volume 151, Issues 1–3, 15 August 2009, Pages 46–50
Journal: Chemical Engineering Journal - Volume 151, Issues 1–3, 15 August 2009, Pages 46–50
نویسندگان
C. Karunakaran, R. Dhanalakshmi, P. Anilkumar,