Wet oxidation of thin AlAs in cylindrical composite of GaAs/AlAs/GaAs

Lateral wet oxidation in a cylindrical composite, GaAs/AlAs/GaAs, with varying thickness of the AlAs layer has been investigated. The oxidation depth in AlAs was measured in the temperature range of 400–480 °C. At given temperature and time, the depth increases with the increase in thickness. The thickness effect was successfully interpreted based on the kinetic model of boundary layer diffusion. The results are consistent with the findings from early studies on samples of square and rectangular cross-sections with the same activation energy of the thermal process.

► Lateral wet oxidation in a cylindrical GaAs/AlAs/GaAs has been investigated.
► At given temperature and time, the oxidation depth in AlAs is increased with thickness.
► The thickness effect was successfully interpreted by the kinetic model of boundary layer diffusion. The activation energy of the thermal process was obtained.